Preparation of SiC Whiskers from Polycarbosilane
نویسندگان
چکیده
منابع مشابه
Anisotropic etching of SiC whiskers.
We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing se...
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The fabrication of SiC ceramic materials with an ordered nanostructure through the direct pyrolysis of a self-assembled inorganic-organic block copolymer has generally been unsuccessful even though the versatile processibility has been demonstrated with organic-organic block copolymers. Here we report the synthesis of a novel polycarbosilane-block-poly(methyl methacrylate) diblock copolymer thr...
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Nowadays, SiC is one of the refractory materials which is used widespread because of its unique properties like structural stability in high temperatures. SiC nano whiskers are important in reinforcement of different kinds of composites like ceramic base materials, thanks to their outstanding mechanical, thermal, and chemical properties like low expansion coefficient, high thermal resistant, hi...
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This study describes the role of in situ nano SiC whiskers on the strength and density of alumina silicate–SiC-carbonrefractory compounds. The prepared specimens were composed of 65 wt. % chamotte as alumina silicatecompound, 15 wt. % SiC-containing material regenerates and 10 wt. % fine coke and 10 wt. % liquid resole asbinder. Different values of additives (such as silicon a...
متن کاملPreparation of β-SiC Coatings Using 1,2-Dimethyldisilane as Precursor
A cold-wall upstream reactor was designed to study the deposition of P-Sic layers on WC-Co hard metal substrates. Experiments demonstrated that P-Sic coatings can be easily deposited on inductively heated substrates at temperatures between 1000-1400°C by thermal decomposition of 1,2-dimethyldisilane under normal pressure conditions. It was shown that this silicon compound is an advanced precurs...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 1996
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.104.1100